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US Patent Issued to Wisconsin Alumni Research Foundation on Nov. 3 for "Surface-water-assisted deposition of patterned films of aligned nanoparticles" (Wisconsin Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,665, issued on Nov. 3, was assigned to Wisconsin Alumni Research Foundation (Madison, Wis.). "Surface-water-assisted deposition of patterned... Read More


US Patent Issued to Kokusai Electric on Nov. 3 for "Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,666, issued on Nov. 3, was assigned to Kokusai Electric Corp. (Tokyo). "Processing method, method of manufacturing semiconductor device, pro... Read More


US Patent Issued to Littelfuse Semiconductor (Wuxi) on Nov. 3 for "Method of glass deposition for semiconductor device fabrication" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,668, issued on Nov. 3, was assigned to Littelfuse Semiconductor (Wuxi) Co. Ltd. (Wuxi, China). "Method of glass deposition for semiconductor... Read More


US Patent Issued to Applied Materials on Nov. 3 for "Methods of forming silicon nitride films" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,669, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Methods of forming silicon nitride films" was invented... Read More


US Patent Issued to SK keyfoundry on Nov. 3 for "Method for manufacturing semiconductor die" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,670, issued on Nov. 3, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea). "Method for manufacturing semiconductor die" was inven... Read More


US Patent Issued to Tokyo Electron, International Business Machines on Nov. 3 for "Halogen gas mixtures for through-substrate etching" (New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,671, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo) and International Business Machines Corp. (Armonk, N.Y.). "Halogen gas mi... Read More


US Patent Issued to CANSEMI TECHNOLOGY on Nov. 3 for "Method of manufacturing metal interconnection line based on gradient over-etch and ammonium fluoride treatment and metal interconnection line" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,672, issued on Nov. 3, was assigned to CANSEMI TECHNOLOGY INC. (Guangdong, China). "Method of manufacturing metal interconnection line based... Read More


US Patent Issued to SEMES on Nov. 3 for "Method of forming semiconductor device and substrate processing system for forming semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,673, issued on Nov. 3, was assigned to SEMES Co. LTD. (Cheonan-si, South Korea). "Method of forming semiconductor device and substrate proce... Read More


US Patent Issued to Sandisk Technologies on Nov. 3 for "Method of making high aspect ratio openings using multiple cladding masks and apparatus for implementing the same" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,674, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Method of making high aspect ratio openings using mult... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing Comapny on Nov. 3 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,675, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Comapny Ltd. (Hsinchu, Taiwan). "Semiconductor device and manufact... Read More